The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
| Autor: | Teklinska, Dominika, Grodecki, Kacper, Jozwik-Biała, Iwona, Caban, Piotr, Olszyna, Andrzej, Strupinski, Wlodek |
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| Zdroj: | In Journal of Crystal Growth 1 September 2014 401:542-546 |
| Databáze: | ScienceDirect |
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