Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
| Autor: | Gogova, D., Wagner, G., Baldini, M., Schmidbauer, M., Irmscher, K., Schewski, R., Galazka, Z., Albrecht, M., Fornari, R. |
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| Zdroj: | In Journal of Crystal Growth 1 September 2014 401:665-669 |
| Databáze: | ScienceDirect |
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