Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)
| Autor: | Kuwano, Noriyuki, Ryu, Yuki, Mitsuhara, Masatoshi, Lin, Chia-Hung, Uchiyama, Shota, Maruyama, Takahiro, Suzuki, Yohei, Naritsuka, Shigeya |
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| Zdroj: | In Journal of Crystal Growth 1 September 2014 401:409-413 |
| Databáze: | ScienceDirect |
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