Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster
| Autor: | Quinci, T., Kuyyalil, J., Thanh, T. Nguyen, Wang, Y. Ping, Almosni, S., Létoublon, A., Rohel, T., Tavernier, K., Chevalier, N., Dehaese, O., Boudet, N., Bérar, J.F., Loualiche, S., Even, J., Bertru, N., Corre, A. Le, Durand, O., Cornet, C. |
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| Zdroj: | In Journal of Crystal Growth 1 October 2013 380:157-162 |
| Databáze: | ScienceDirect |
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