Growth of heterostructures on InAs for high mobility device applications

Autor: Contreras-Guerrero, R., Wang, S., Edirisooriya, M., Priyantha, W., Rojas-Ramirez, J.S., Bhuwalka, K., Doornbos, G., Holland, M., Oxland, R., Vellianitis, G., Van Dal, M., Duriez, B., Passlack, M., Diaz, C.H., Droopad, R.
Zdroj: In Journal of Crystal Growth 1 September 2013 378:117-120
Databáze: ScienceDirect