Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
Autor: | Gautier, S., Moudakir, T., Patriarche, G., Rogers, D.J., Sandana, V.E., Hosseini Téherani, F., Bove, P., El Gmili, Y., Pantzas, K., Sundaram, Suresh, Troadec, D., Voss, P.L., Razeghi, M., Ougazzaden, A. |
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Zdroj: | In Journal of Crystal Growth 1 May 2013 370:63-67 |
Databáze: | ScienceDirect |
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