Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
| Autor: | Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A. |
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| Zdroj: | In Journal of Crystal Growth 1 May 2013 370:57-62 |
| Databáze: | ScienceDirect |
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