Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature

Autor: Vazquez-Cortas, D., Shimomura, S., Lopez-Lopez, M., Cruz-Hernandez, E., Gallardo-Hernandez, S., Kudriavtsev, Y., Mendez-Garcia, V.H.
Zdroj: In Journal of Crystal Growth 15 May 2012 347(1):77-81
Databáze: ScienceDirect
Externí odkaz: