Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
| Autor: | Buchholt, K., Eklund, P., Jensen, J., Lu, J., Ghandi, R., Domeij, M., Zetterling, C.M., Behan, G., Zhang, H., Lloyd Spetz, A., Hultman, L. |
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| Zdroj: | In Journal of Crystal Growth 15 March 2012 343(1):133-137 |
| Databáze: | ScienceDirect |
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