740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

Autor: Ohkawa, Kazuhiro, Watanabe, Tomomasa, Sakamoto, Masanori, Hirako, Akira, Deura, Momoko
Zdroj: In Journal of Crystal Growth 15 March 2012 343(1):13-16
Databáze: ScienceDirect