Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications
| Autor: | Müller, St.G., Sanchez, E.K., Hansen, D.M., Drachev, R.D., Chung, G., Thomas, B., Zhang, J., Loboda, M.J., Dudley, M., Wang, H., Wu, F., Byrappa, S., Raghothamachar, B., Choi, G. |
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| Zdroj: | In Journal of Crystal Growth 1 August 2012 352(1):39-42 |
| Databáze: | ScienceDirect |
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