Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy

Autor: Tawil, S.N.M., Krishnamurthy, D., Kakimi, R., Emura, S., Hasegawa, S., Asahi, H.
Zdroj: In Journal of Crystal Growth 15 May 2011 323(1):351-354
Databáze: ScienceDirect