GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
| Autor: | Richter, M., Rossel, C., Webb, D.J., Topuria, T., Gerl, C., Sousa, M., Marchiori, C., Caimi, D., Siegwart, H., Rice, P.M., Fompeyrine, J. |
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| Zdroj: | In Journal of Crystal Growth 15 May 2011 323(1):387-392 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect