Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

Autor: Mizerov, A.M., Jmerik, V.N., Yagovkina, M.A., Troshkov, S.I., Kop'ev, P.S., Ivanov, S.V.
Zdroj: In Journal of Crystal Growth 15 May 2011 323(1):68-71
Databáze: ScienceDirect