Role of buried cracks in mitigating strain in crack free GaN grown on Si (1 1 1) employing AlN interlayer schemes

Autor: Tang, H., Baribeau, J.-M., Aers, G.C., Fraser, J., Rolfe, S., Bardwell, J.A.
Zdroj: In Journal of Crystal Growth 15 May 2011 323(1):413-417
Databáze: ScienceDirect