Role of buried cracks in mitigating strain in crack free GaN grown on Si (1 1 1) employing AlN interlayer schemes
Autor: | Tang, H., Baribeau, J.-M., Aers, G.C., Fraser, J., Rolfe, S., Bardwell, J.A. |
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Zdroj: | In Journal of Crystal Growth 15 May 2011 323(1):413-417 |
Databáze: | ScienceDirect |
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