Variation in Si(1 0 0) surface roughness caused by H-termination during high-temperature Ar annealing

Autor: Araki, Koji, Isogai, Hiromichi, Takeda, Ryuji, Izunome, Koji, Zhao, Xinwei
Zdroj: In Journal of Crystal Growth 1 March 2011 318(1):84-88
Databáze: ScienceDirect