Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Autor: Huang, Y., Ryou, J.-H., Dupuis, R.D., D'Costa, V.R., Steenbergen, E.H., Fan, J., Zhang, Y.-H., Petschke, A., Mandl, M., Chuang, S.-L.
Zdroj: In Journal of Crystal Growth 2011 314(1):92-96
Databáze: ScienceDirect