Defect structure of 4H silicon carbide ingots

Autor: Lebedev, A.O., Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Tairov, Yu.M., Fadeev, A.Yu.
Zdroj: In Journal of Crystal Growth 1 March 2011 318(1):394-396
Databáze: ScienceDirect