Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
| Autor: | Farrell, R.M., Haeger, D.A., Chen, X., Iza, M., Hirai, A., Kelchner, K.M., Fujito, K., Chakraborty, A., Keller, S., DenBaars, S.P., Speck, J.S., Nakamura, S. |
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| Zdroj: | In Journal of Crystal Growth 2010 313(1):1-7 |
| Databáze: | ScienceDirect |
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