Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC
| Autor: | Caban, Piotr, Strupinski, Wlodek, Szmidt, Jan, Wojcik, Marek, Gaca, Jaroslaw, Kelekci, Ozgur, Caliskan, Deniz, Ozbay, Ekmel |
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| Zdroj: | In Journal of Crystal Growth 2011 315(1):168-173 |
| Databáze: | ScienceDirect |
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