Low-temperature growth of epitaxial (1 0 0) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor
| Autor: | Adam, T.N., Bedell, S., Reznicek, A., Sadana, D.K., Venkateshan, A., Tsunoda, T., Seino, T., Nakatsuru, J., Shinde, S.R. |
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| Zdroj: | In Journal of Crystal Growth 2010 312(23):3473-3478 |
| Databáze: | ScienceDirect |
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