Selective area epitaxy of InGaN quantum well triangular microrings with a single type of sidewall facets
| Autor: | Feng, Wen, Kuryatkov, Vladimir V., Nikishin, Sergey A., Holtz, Mark |
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| Zdroj: | In Journal of Crystal Growth 2010 312(10):1717-1720 |
| Databáze: | ScienceDirect |
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