Selective epitaxial growth of Ge(1 1 0) in trenches using the aspect ratio trapping technique
| Autor: | Destefanis, V., Hartmann, J.M., Baud, L., Delaye, V., Billon, T. |
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| Zdroj: | In Journal of Crystal Growth 2010 312(7):918-925 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect