Impact of the H 2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si
| Autor: | Hartmann, J.M., Abbadie, A., Barnes, J.P., Fédéli, J.M., Billon, T., Vivien, L. |
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| Zdroj: | In Journal of Crystal Growth 2010 312(4):532-541 |
| Databáze: | ScienceDirect |
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