Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(1 1 0) and other high-index surfaces
Autor: | Reiher, F., Dadgar, A., Bläsing, J., Wieneke, M., Krost, A. |
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Zdroj: | In Journal of Crystal Growth 2010 312(2):180-184 |
Databáze: | ScienceDirect |
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