Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(1 1 0) and other high-index surfaces

Autor: Reiher, F., Dadgar, A., Bläsing, J., Wieneke, M., Krost, A.
Zdroj: In Journal of Crystal Growth 2010 312(2):180-184
Databáze: ScienceDirect