Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits
| Autor: | Bennett, Brian R., Ancona, Mario G., Champlain, James G., Papanicolaou, Nicolas A., Boos, J. Brad |
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| Zdroj: | In Journal of Crystal Growth 2009 312(1):37-40 |
| Databáze: | ScienceDirect |
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