Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate
| Autor: | Sasaki, Hitoshi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira |
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| Zdroj: | In Journal of Crystal Growth 2009 311(10):2910-2913 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect