MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy

Autor: Bugge, F., Zorn, M., Zeimer, U., Pietrzak, A., Erbert, G., Weyers, M.
Zdroj: In Journal of Crystal Growth 2009 311(4):1065-1069
Databáze: ScienceDirect