High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6 μm
| Autor: | Shao, H., Torfi, A., Li, W., Moscicka, D., Wang, W.I. |
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| Zdroj: | In Journal of Crystal Growth 2009 311(7):1893-1896 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect