Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
| Autor: | Cordier, Y., Baron, N., Chenot, S., Vennéguès, P., Tottereau, O., Leroux, M., Semond, F., Massies, J. |
|---|---|
| Zdroj: | In Journal of Crystal Growth 2009 311(7):2002-2005 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect