4H-SiC epitaxial layer growth by trichlorosilane (TCS)
| Autor: | La Via, F., Izzo, G., Mauceri, M., Pistone, G., Condorelli, G., Perdicaro, L., Abbondanza, G., Calcagno, L., Foti, G., Crippa, D. |
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| Zdroj: | In Journal of Crystal Growth 2008 311(1):107-113 |
| Databáze: | ScienceDirect |
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