Residual stress relaxation in GaN/sapphire circular pillars measured by Raman scattering spectroscopy

Autor: Margueron, Samuel H. a, ⁎, Bourson, Patrice a, Gautier, Simon a, Soltani, Ali b, Troadec, David b, De Jaeger, Jean-Claude b, Sirenko, Andrei A. c, Ougazzaden, Abdallah d
Zdroj: In Journal of Crystal Growth 2008 310(24):5321-5326
Databáze: ScienceDirect