Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping-type liquid phase epitaxy from the pure Si melt
| Autor: | Wang, Zengmei, Kutsukake, Kentaro, Kodama, Hitoshi, Usami, Noritaka, Fujiwara, Kozo, Nose, Yoshitaro, Nakajima, Kazuo |
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| Zdroj: | In Journal of Crystal Growth 2008 310(24):5248-5251 |
| Databáze: | ScienceDirect |
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