Comparison of electrical properties in GaN grown on Si(1 1 1) and c-sapphire substrate by MOVPE
| Autor: | Ito, Tsuneo, Nomura, Yukiyasu, Selvaraj, S. Lawrence, Egawa, Takashi |
|---|---|
| Zdroj: | In Journal of Crystal Growth 2008 310(23):4896-4899 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect