Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
| Autor: | Hemmingsson, C., Pozina, G., Heuken, M., Schineller, B., Monemar, B. |
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| Zdroj: | In Journal of Crystal Growth 2008 310(5):906-910 |
| Databáze: | ScienceDirect |
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