Nanostructure of GaAs 0.88Sb 0.10N 0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP

Autor: Song, X., Babcock, S.E., Paulson, C.A., Kuech, T.F., Huang, J.Y.T., Xu, D.P., Park, J., Mawst, L.J.
Zdroj: In Journal of Crystal Growth 2008 310(7):2377-2381
Databáze: ScienceDirect