Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method
| Autor: | Yoshida, Takehiro, Oshima, Yuichi, Eri, Takeshi, Ikeda, Ken, Yamamoto, Shunsuke, Watanabe, Kazutoshi, Shibata, Masatomo, Mishima, Tomoyoshi |
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| Zdroj: | In Journal of Crystal Growth 2008 310(1):5-7 |
| Databáze: | ScienceDirect |
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