Epitaxial growth of Ge on a thin SiO 2 layer by ultrahigh vacuum chemical vapor deposition
| Autor: | Halbwax, M., Renard, C., Cammilleri, D., Yam, V., Fossard, F., Bouchier, D., Zheng, Y., Rzepka, E. |
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| Zdroj: | In Journal of Crystal Growth 2007 308(1):26-29 |
| Databáze: | ScienceDirect |
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