Growth of 4H-SiC on rhombohedral (0 1 1¯ 4) plane seeds

Autor: Li, J., Filip, O., Epelbaum, B.M., Xu, X., Bickermann, M., Winnacker, A.
Zdroj: In Journal of Crystal Growth 2007 308(1):41-49
Databáze: ScienceDirect