Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer layer
| Autor: | Yan, J.F., Guo, L.W., Zhang, J., Zhu, X.L., Ding, G.J., Xing, Z.G., Zhou, Z.T., Pei, X.J., Wang, Y., Jia, H.Q., Chen, H., Zhou, J.M. |
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| Zdroj: | In Journal of Crystal Growth 2007 307(1):35-39 |
| Databáze: | ScienceDirect |
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