Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge 1−xSi x bulk crystals
Autor: | Smirnova, O.V., Kalaev, V.V., Makarov, Yu.N., Abrosimov, N.V., Riemann, H., Kurlov, V.N. |
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Zdroj: | In Journal of Crystal Growth 2007 303(1):141-145 |
Databáze: | ScienceDirect |
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