Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge 1−xSi x bulk crystals

Autor: Smirnova, O.V., Kalaev, V.V., Makarov, Yu.N., Abrosimov, N.V., Riemann, H., Kurlov, V.N.
Zdroj: In Journal of Crystal Growth 2007 303(1):141-145
Databáze: ScienceDirect