Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride

Autor: Cheng, S.F., Woo, R.L., Noori, A.M., Malouf, G., Goorsky, M.S., Hicks, R.F.
Zdroj: In Journal of Crystal Growth 2007 299(2):277-281
Databáze: ScienceDirect