Photoelectric properties of highly excited GaN:Fe epilayers, grown by modulation- and continuous-doping technique s
| Autor: | Bougrioua, Z., Azize, M., Beaumont, B., Gibart, P., Malinauskas, T., Neimontas, K., Mekys, A., Storasta, J., Jaras˘iūnas, K. |
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| Zdroj: | In Journal of Crystal Growth 2007 300(1):228-232 |
| Databáze: | ScienceDirect |
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