Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor

Autor: Hemmingsson, C., Paskov, P.P., Pozina, G., Heuken, M., Schineller, B., Monemar, B.
Zdroj: In Journal of Crystal Growth 2007 300(1):32-36
Databáze: ScienceDirect