Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor
Autor: | Hemmingsson, C., Paskov, P.P., Pozina, G., Heuken, M., Schineller, B., Monemar, B. |
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Zdroj: | In Journal of Crystal Growth 2007 300(1):32-36 |
Databáze: | ScienceDirect |
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