Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy
| Autor: | Endo, Y., Tanioka, K., Hijikata, Y., Yaguchi, H., Yoshida, S., Yoshita, M., Akiyama, H., Ono, W., Nakajima, F., Katayama, R., Onabe, K. |
|---|---|
| Zdroj: | In Journal of Crystal Growth 2007 298:73-75 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect