Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE

Autor: Panpech, P., Vijarnwannaluk, S., Sanorpim, S., Ono, W., Nakajima, F., Katayama, R., Onabe, K.
Zdroj: In Journal of Crystal Growth 2007 298:107-110
Databáze: ScienceDirect