Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE
Autor: | Panpech, P., Vijarnwannaluk, S., Sanorpim, S., Ono, W., Nakajima, F., Katayama, R., Onabe, K. |
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Zdroj: | In Journal of Crystal Growth 2007 298:107-110 |
Databáze: | ScienceDirect |
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