Electrical properties of undoped In 0.53Ga 0.47As grown on InP substrates by molecular beam epitaxy
Autor: | Cui, L.J., Zeng, Y.P., Wang, B.Q., Zhu, Z.P. |
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Zdroj: | In Journal of Crystal Growth 2006 293(2):291-293 |
Databáze: | ScienceDirect |
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