The effects of AlN buffer on the properties of InN epitaxial films grown on Si(1 1 1) by plasma-assisted molecular-beam epitaxy
| Autor: | Wu, C.-L., Shen, C.-H., Chen, H.-Y., Tsai, S.-J., Lin, H.-W., Lee, H.-M., Gwo, S., Chuang, T.-F., Chang, H.-S., Hsu, T.M. |
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| Zdroj: | In Journal of Crystal Growth 2006 288(2):247-253 |
| Databáze: | ScienceDirect |
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