Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD
| Autor: | Grzegorczyk, A.P., Hageman, P.R., Weyher, J.L., Larsen, P.K. |
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| Zdroj: | In Journal of Crystal Growth 15 September 2005 283(1-2):72-80 |
| Databáze: | ScienceDirect |
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