Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers

Autor: Paskova, T., Darakchieva, V., Paskov, P.P., Birch, J., Valcheva, E., Persson, P.O.A., Arnaudov, B., Tungasmitta, S., Monemar, B.
Zdroj: In Journal of Crystal Growth 2005 281(1):55-61
Databáze: ScienceDirect